Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
RB088BM-30TL

RB088BM-30TL

ROHM Semiconductor

SUPER LOW IR, 30V, 10A, TO-252 (

2500

UMN1NFHTR

UMN1NFHTR

ROHM Semiconductor

SWITCHING DIODES (CORRESPONDS TO

2880

UMP1NFHTR

UMP1NFHTR

ROHM Semiconductor

SWITCHING DIODES (CORRESPONDS TO

0

RB088BM200TL

RB088BM200TL

ROHM Semiconductor

200V, 10A SUPER LOW IR TYPE SCHO

2465

EMP11FHT2R

EMP11FHT2R

ROHM Semiconductor

HIGH-SPEED SWITCHING, 80V, 100MA

0

RB218BM200FHTL

RB218BM200FHTL

ROHM Semiconductor

200V, 20A SUPER LOW IR TYPE AUTO

2495

DA228UMFHTL

DA228UMFHTL

ROHM Semiconductor

LOW-LEAKAGE, 80V, 100MA, ANODE/C

2980

DAN202KFHT146

DAN202KFHT146

ROHM Semiconductor

ROHM'S SWITCHING DIODES, INCLUDI

2900

RB495DFHT146

RB495DFHT146

ROHM Semiconductor

ROHM'S SCHOTTKY BARRIER DIODES A

2410

DAP202KFHT146

DAP202KFHT146

ROHM Semiconductor

ROHM'S SWITCHING DIODES, INCLUDI

6389

RB218BM200TL

RB218BM200TL

ROHM Semiconductor

200V, 20A SUPER LOW IR TYPE SCHO

2496

RB705DFHT146

RB705DFHT146

ROHM Semiconductor

ROHM'S SCHOTTKY BARRIER DIODES A

1410

RB717UMTL

RB717UMTL

ROHM Semiconductor

RB717UM IS SCHOTTKY BARRIER DIOD

2740

RB715UMFHTL

RB715UMFHTL

ROHM Semiconductor

RB715UMFH IS THE HIGH RELIABILIT

2690

DA221FHTL

DA221FHTL

ROHM Semiconductor

LOW-LEAKAGE, 20V, 100MA, ANODE/C

2890

RB717UMFHTL

RB717UMFHTL

ROHM Semiconductor

AUTOMOTIVE SCHOTTKY BARRIER DIOD

1920

RB088BM200FHTL

RB088BM200FHTL

ROHM Semiconductor

200V, 10A SUPER LOW IR TYPE AUTO

1300

SCS230KE2HRC11

SCS230KE2HRC11

ROHM Semiconductor

DIODE SIC

0

RB095B-60TL

RB095B-60TL

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 60V 3A CPD

0

RB851YT2R

RB851YT2R

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 3V EMD4

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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