Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
BAW56T,115

BAW56T,115

NXP Semiconductors

RECTIFIER DIODE

78000

1PS300/ZL115

1PS300/ZL115

NXP Semiconductors

SIGNAL DIODE

167960

BAV99/8,215

BAV99/8,215

NXP Semiconductors

RECTIFIER DIODE

0

1PS75SB45,115

1PS75SB45,115

NXP Semiconductors

SCHOTTKY, 2 ELEMENT, 0.12A, 40V

37620

BAW156235

BAW156235

NXP Semiconductors

LOW-LEAKAGE DOUBLE DIODE

7000

1PSSB23125

1PSSB23125

NXP Semiconductors

SCHOTTKY BARRIER DIODE

0

1PS76SB10/6135

1PS76SB10/6135

NXP Semiconductors

RECTIFIER DIODE

0

BAW156/ZLVL

BAW156/ZLVL

NXP Semiconductors

DIODE ARRAY GEN PURP 75V SOT23

0

BAS40-06/ZLVL

BAS40-06/ZLVL

NXP Semiconductors

DIODE ARRAY SCHOTTKY 40V SOT23

0

1PS184,135

1PS184,135

NXP Semiconductors

DIODE ARRAY GP 80V 215MA SMT3

0

BAV170/ZLR

BAV170/ZLR

NXP Semiconductors

DIODE ARRAY GEN PURP 75V SOT23

0

1PS59SB16,115

1PS59SB16,115

NXP Semiconductors

DIODE ARRAY SCHOTTKY 30V SMT3

0

BAV170/ZLVL

BAV170/ZLVL

NXP Semiconductors

DIODE ARRAY GEN PURP 75V SOT23

0

1PS59SB14,115

1PS59SB14,115

NXP Semiconductors

DIODE ARRAY SCHOTTKY 30V SMT3

0

BAS40-05/ZLVL

BAS40-05/ZLVL

NXP Semiconductors

DIODE ARRAY SCHOTTKY 40V SOT23

0

BAV199/ZLR

BAV199/ZLR

NXP Semiconductors

DIODE ARRAY GEN PURP 75V SOT23

0

BAS40-04/ZLR

BAS40-04/ZLR

NXP Semiconductors

DIODE ARRAY SCHOTTKY 40V SOT23

0

BAT54CW/6/ZLX

BAT54CW/6/ZLX

NXP Semiconductors

DIODE SCHOTTKY 30V 200MA SOT323

0

1PS181,135

1PS181,135

NXP Semiconductors

DIODE ARRAY GP 80V 215MA SMT3

0

BAS40-05/ZLR

BAS40-05/ZLR

NXP Semiconductors

DIODE ARRAY SCHOTTKY 40V SOT23

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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