Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
1PS76SB10/6115

1PS76SB10/6115

NXP Semiconductors

RECTIFIER DIODE

12000

BAV70T,115

BAV70T,115

NXP Semiconductors

HIGH-SPEED SWITCHING DIODES

1177300

NUR460P/L07112

NUR460P/L07112

NXP Semiconductors

ULTRAFAST POWER DIODE

171412

NUR460P/L02112

NUR460P/L02112

NXP Semiconductors

ULTRAFAST POWER DIODE

109000

1PS76SB70/DG/B2115

1PS76SB70/DG/B2115

NXP Semiconductors

RECTIFIER DIODE

24000

BYV42G-200,127

BYV42G-200,127

NXP Semiconductors

NOW WEEN - BYV42G-200 - ULTRAFAS

655

NXPS20H110C,127

NXPS20H110C,127

NXP Semiconductors

NOW WEEN - NXPS20H110C - POWER S

0

BYT28-300,127

BYT28-300,127

NXP Semiconductors

NOW WEEN - BYT28-300 - ULTRAFAST

0

NXPS20H100CX,127

NXPS20H100CX,127

NXP Semiconductors

NOW WEEN - NXPS20H100CX - POWER

0

BYV40E-150,115

BYV40E-150,115

NXP Semiconductors

NOW WEEN - BYV40E-150 - ULTRAFAS

14600

1PS76SB40/DG/B2115

1PS76SB40/DG/B2115

NXP Semiconductors

RECTIFIER DIODE

24000

1PS88SB48/DG/B2115

1PS88SB48/DG/B2115

NXP Semiconductors

RECTIFIER DIODE

205750

1PS226,115

1PS226,115

NXP Semiconductors

RECTIFIER DIODE

10867666

NXPS20H100C,127

NXPS20H100C,127

NXP Semiconductors

NOW WEEN - NXPS20H100C - POWER S

8832

BYV34G-600127

BYV34G-600127

NXP Semiconductors

ULTRAFAST RECTIFIER DIODE TO 22

3293

1PS75SB45,135

1PS75SB45,135

NXP Semiconductors

SCHOTTKY, 2 ELEMENT, 0.12A, 40V

9000

BAV99/8,235

BAV99/8,235

NXP Semiconductors

RECTIFIER DIODE

0

1PS181,115

1PS181,115

NXP Semiconductors

RECTIFIER DIODE

6000

BYV34-600,127

BYV34-600,127

NXP Semiconductors

NOW WEEN - BYV34-600 - ULTRAFAST

0

1PS184,115

1PS184,115

NXP Semiconductors

RECTIFIER DIODE

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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