Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
BYV32E-200,127

BYV32E-200,127

WeEn Semiconductors Co., Ltd

DIODE ARRAY GP 200V 20A TO220AB

0

BYV430J-600PQ

BYV430J-600PQ

WeEn Semiconductors Co., Ltd

DIODE ARRAY GP 600V 30A TO3P

0

BYV430W-600PQ

BYV430W-600PQ

WeEn Semiconductors Co., Ltd

ULTRAFAST POWER DIODE

1170

BYV430K-300PQ

BYV430K-300PQ

WeEn Semiconductors Co., Ltd

DIODE ARRAY GP 300V 30A TO3P

0

NXPSC20650W-AQ

NXPSC20650W-AQ

WeEn Semiconductors Co., Ltd

SILICON CARBIDE POWER DIODE

480

BYV32E-300PQ

BYV32E-300PQ

WeEn Semiconductors Co., Ltd

DUAL ULTRAFAST POWER DIODE

4990

BYQ72EK-200Q

BYQ72EK-200Q

WeEn Semiconductors Co., Ltd

DIODE ARRAY GP 200V 15A TO3P

0

BYQ72EW-200Q

BYQ72EW-200Q

WeEn Semiconductors Co., Ltd

DIODE ARRAY GP 200V 15A TO247-3

0

BYV415J-600PQ

BYV415J-600PQ

WeEn Semiconductors Co., Ltd

DIODE TO3PF STANDARD M

0

WNS40H100CGQ

WNS40H100CGQ

WeEn Semiconductors Co., Ltd

SCHOTTKY POWER DIODE

5000

BYV430W-300PQ

BYV430W-300PQ

WeEn Semiconductors Co., Ltd

DIODE ARRAY GP 300V 30A TO247-3

0

BYV32EB-300PJ

BYV32EB-300PJ

WeEn Semiconductors Co., Ltd

DUAL ULTRAFAST POWER DIODE

4654

WNS40100CQ

WNS40100CQ

WeEn Semiconductors Co., Ltd

POWER SCHOTTKY DIODES

5000

NXPS20S100C,127

NXPS20S100C,127

WeEn Semiconductors Co., Ltd

DIODE ARRAY SCHOTTKY 100V TO220

0

BYV410X-600,127

BYV410X-600,127

WeEn Semiconductors Co., Ltd

DIODE ARRAY UF 600V 10A TO220-3

0

BYQ28ED-200PLJ

BYQ28ED-200PLJ

WeEn Semiconductors Co., Ltd

DIODE ARRAY GP 200V 10A DPAK

0

NXPS20S100CX,127

NXPS20S100CX,127

WeEn Semiconductors Co., Ltd

DIODE ARRAY SCHOTTKY 100V TO220F

0

BYV32EB-200PQ

BYV32EB-200PQ

WeEn Semiconductors Co., Ltd

DIODE ARRAY GP 200V 20A D2PAK

0

NXPS20S110C,127

NXPS20S110C,127

WeEn Semiconductors Co., Ltd

DIODE SCHOTTKY 110V SIL3P

0

NXPSC20650WQ

NXPSC20650WQ

WeEn Semiconductors Co., Ltd

DIODE ARRAY SCHOTTKY 650V TO247

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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