Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
VBT3045CBP-M3/4W

VBT3045CBP-M3/4W

Vishay General Semiconductor – Diodes Division

DIODE SCHOTTKY 30A 45V TO-263AB

0

UGB18BCTHE3/45

UGB18BCTHE3/45

Vishay General Semiconductor – Diodes Division

DIODE ARRAY GP 100V 18A TO263AB

0

VS-25CTQ040STRR-M3

VS-25CTQ040STRR-M3

Vishay General Semiconductor – Diodes Division

DIODE SCHOTTKY 40V 15A D2PAK

0

VF40150C-M3/4W

VF40150C-M3/4W

Vishay General Semiconductor – Diodes Division

DIODE SCHOTTKY 40A 100V ITO220AB

0

V20DM60C-M3/I

V20DM60C-M3/I

Vishay General Semiconductor – Diodes Division

DIODE ARRAY SCHOTTKY 60V TO263AC

1963

VS-10CVH02-M3/I

VS-10CVH02-M3/I

Vishay General Semiconductor – Diodes Division

DIODE GEN PURPOSE 200V SLIMDPAK

60

V30202C-M3/4W

V30202C-M3/4W

Vishay General Semiconductor – Diodes Division

DIODE SCHOTTKY 200V 30A TO220AB

1716

MBRB2060CT-E3/81

MBRB2060CT-E3/81

Vishay General Semiconductor – Diodes Division

DIODE ARRAY SCHOTTKY 60V TO263AB

136

VS-6CSH02HM3/87A

VS-6CSH02HM3/87A

Vishay General Semiconductor – Diodes Division

DIODE STANDARD 200V 3A TO277A

0

VS-30CTH02STRRHM3

VS-30CTH02STRRHM3

Vishay General Semiconductor – Diodes Division

FREDS - D2PAK

0

VS-MURD620CTTRLHM3

VS-MURD620CTTRLHM3

Vishay General Semiconductor – Diodes Division

DIODE STANDARD 200V 3A DPAK

0

VS-60CTQ150-M3

VS-60CTQ150-M3

Vishay General Semiconductor – Diodes Division

DIODE ARRAY SCHOTTKY 150V TO220

814

MB10H100CTHE3_A/I

MB10H100CTHE3_A/I

Vishay General Semiconductor – Diodes Division

DIODE ARRAY SCHOTTKY 100V TO263

0

VS-20CTQ045STRL-M3

VS-20CTQ045STRL-M3

Vishay General Semiconductor – Diodes Division

DIODE SCHOTTKY 45V 10A D2PAK

0

VB40M120C-E3/8W

VB40M120C-E3/8W

Vishay General Semiconductor – Diodes Division

DIODE SCHOTTKY 40A 120V TO-263AB

0

BYVF32-150HE3/45

BYVF32-150HE3/45

Vishay General Semiconductor – Diodes Division

DIODE ARRAY GP 150V 18A ITO220AB

0

V10D45CHM3_A/I

V10D45CHM3_A/I

Vishay General Semiconductor – Diodes Division

DIODE ARRAY SCHOTTKY 45V TO263AC

0

SBL3040PT-E3/45

SBL3040PT-E3/45

Vishay General Semiconductor – Diodes Division

DIODE ARRAY SCHOTTKY 40V TO3P

916

V20PWM45C-M3/I

V20PWM45C-M3/I

Vishay General Semiconductor – Diodes Division

DIODE ARRAY SCHOTT 45V SLIMDPAK

3038

VS-32CTQ025S-M3

VS-32CTQ025S-M3

Vishay General Semiconductor – Diodes Division

DIODE SCHOTTKY 25V 15A TO263AB

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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