Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
25CTQ045-1

25CTQ045-1

SMC Diode Solutions

DIODE SCHOTTKY 45V 15A TO262

0

MBRB30120CTTR

MBRB30120CTTR

SMC Diode Solutions

DIODE SCHOTTKY 120V D2PAK

0

SDURB3040CTTR

SDURB3040CTTR

SMC Diode Solutions

DIODE GEN PURP 400V 15A D2PAK

7735

88CNQ060

88CNQ060

SMC Diode Solutions

DIODE SCHOTTKY 60V 40A PRM2

0

201CMQ050

201CMQ050

SMC Diode Solutions

DIODE SCHOTTKY 50V 100A PRM4

0

300CMQ040

300CMQ040

SMC Diode Solutions

DIODE SCHOTTKY 40V 150A PRM4

2

MBRF1045CTP

MBRF1045CTP

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 45V ITO220

847

MBR6045WT

MBR6045WT

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 45V TO247AD

1956

STF15100C

STF15100C

SMC Diode Solutions

DIODE SCHOTTKY 100V ITO220AB

0

BAT54AWTR

BAT54AWTR

SMC Diode Solutions

DIODE SCHOTTKY 30V 100MA SOT323

0

86CNQ200SL

86CNQ200SL

SMC Diode Solutions

DIODE SCHOTTKY 200V 40A PRM2-SL

0

301CMQ050

301CMQ050

SMC Diode Solutions

DIODE SCHOTTKY 50V 150A PRM4

0

BAT54C

BAT54C

SMC Diode Solutions

RECTIFIER, SCHOTTKY, 2 ELEMENT,

297696

40CPQ035

40CPQ035

SMC Diode Solutions

40A, 35V, TO-247AD, SCHOTTKY REC

300

160CMQ040

160CMQ040

SMC Diode Solutions

DIODE SCHOTTKY 40V 80A TO249AA

0

MBRD20100CTTR

MBRD20100CTTR

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 100V DPAK

57

BAT54STR

BAT54STR

SMC Diode Solutions

DIODE SCHOTTKY 30V 150MA SOT23

28670

MBR6045CT

MBR6045CT

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 45V TO220AB

0

MBRB60100CTTR

MBRB60100CTTR

SMC Diode Solutions

DIODE ARRAY SCHOTTKY 100V D2PAK

625

SDUR6030WT

SDUR6030WT

SMC Diode Solutions

DIODE ARRAY GP 300V TO247AD

23

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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