Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
SDHD5K

SDHD5K

Semtech

DIODE GEN PURP 5KV 600MA

0

SCNA1

SCNA1

Semtech

DIODE ARRAY 100V 7.5A

0

SCPAR10

SCPAR10

Semtech

DIODE ARRAY GP 1000V 22.5A

0

SET100219

SET100219

Semtech

DIODE MODULE 1000V 30A

0

SCNA4

SCNA4

Semtech

DIODE ARRAY 400V 7.5A

0

SET100311

SET100311

Semtech

DIODE MODULE 150V 45A

0

SCDA1F

SCDA1F

Semtech

DIODE ARRAY 100V 3.75A

0

SCDA4F

SCDA4F

Semtech

DIODE ARRAY 400V 3.75A

0

SCPA15FF

SCPA15FF

Semtech

DIODE ARRAY GP 150V 7.5A

0

SCNA05

SCNA05

Semtech

DIODE ARRAY 50V 7.5A

0

SET050223

SET050223

Semtech

DIODE MODULE 500V 23A

0

SCDA6

SCDA6

Semtech

DIODE ARRAY 600V 3.75A

0

SET031011

SET031011

Semtech

DIODE MODULE 150V 15A

0

SDHN15K

SDHN15K

Semtech

DIODE ARRAY 15000V 400MA

0

S1KW32C-4D

S1KW32C-4D

Semtech

DIODE GEN PURP 32KV 1.5A

0

SET040211

SET040211

Semtech

DIODE MODULE 150V 15A

0

SCSNM0L

SCSNM0L

Semtech

DIODE DOUBLER 1KV 75A STD REC

0

SCNA1F

SCNA1F

Semtech

DIODE ARRAY 100V 7.5A

0

SET100212

SET100212

Semtech

DIODE MODULE 600V 45A

0

SET030603

SET030603

Semtech

DIODE MODULE 1000V 15A

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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