Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
SB10-015C-TB-E

SB10-015C-TB-E

Sanyo Denki SanUPS Products

SCHOTTKY BARRIER DIODE

9000

SBE807-TL-E

SBE807-TL-E

Sanyo Denki SanUPS Products

SCHOTTKY BARRIER DIODE

121633

DCD010-TB-E

DCD010-TB-E

Sanyo Denki SanUPS Products

SILICON EPITAXIAL DIODE

222000

SBT350-06J

SBT350-06J

Sanyo Denki SanUPS Products

SCHOTTKY BARRIER RECTIFIER DIODE

2053

SBT250-06J

SBT250-06J

Sanyo Denki SanUPS Products

SCHOTTKY BARRIER RECTIFIER DIODE

2470

SBS808M-TL-E-SY

SBS808M-TL-E-SY

Sanyo Denki SanUPS Products

SCHOTTKY BARRIER DIODE

0

DCC010-TB-E

DCC010-TB-E

Sanyo Denki SanUPS Products

ULTRAHIGH-SPEED SWITCHING DIODE

66321

SBE002

SBE002

Sanyo Denki SanUPS Products

SCHOTTKY BARRIER DIODE

0

SBS813-TL-E

SBS813-TL-E

Sanyo Denki SanUPS Products

30 V, 3.0 A LOW VF SCHOTTKY BARR

2031

RE0208DA-TR-E-SY

RE0208DA-TR-E-SY

Sanyo Denki SanUPS Products

800 V, 200 MILLIAMP FAST RECOVER

15000

CPH3403-TL-E

CPH3403-TL-E

Sanyo Denki SanUPS Products

N-CHANNEL MOS SILICON FET

51000

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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