Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
FMU-26R

FMU-26R

Sanken Electric Co., Ltd.

DIODE ARRAY GP 600V 10A TO220F

283

FMX-4206S

FMX-4206S

Sanken Electric Co., Ltd.

DIODE ARRAY GP 600V 20A TO3PF

0

MPL-102S

MPL-102S

Sanken Electric Co., Ltd.

DIODE GP 200V 19A TO-220S

0

MPL-102SVR

MPL-102SVR

Sanken Electric Co., Ltd.

DIODE GP 200V 10A TO220S

0

FMG-26R

FMG-26R

Sanken Electric Co., Ltd.

DIODE ARRAY GP 600V 6A TO220F

0

FMXK-2206S

FMXK-2206S

Sanken Electric Co., Ltd.

DIODE ARRAY GP 600V 20A TO220F

0

FMG-26S

FMG-26S

Sanken Electric Co., Ltd.

DIODE ARRAY GP 600V 6A TO220F

0

FMB-2306

FMB-2306

Sanken Electric Co., Ltd.

DIODE ARRAY SCHOTTKY 60V TO220F

0

FMM-26R

FMM-26R

Sanken Electric Co., Ltd.

DIODE ARRAY GP 600V 10A TO220F

0

FMJ-23L

FMJ-23L

Sanken Electric Co., Ltd.

DIODE ARRAY SCHOTTKY 30V TO220F

0

FML-24S

FML-24S

Sanken Electric Co., Ltd.

DIODE ARRAY GP 400V 10A TO220F

0

FMEN-220A

FMEN-220A

Sanken Electric Co., Ltd.

DIODE ARRAY SCHOTTKY 100V TO220F

0

FMM-24S

FMM-24S

Sanken Electric Co., Ltd.

DIODE ARRAY GP 400V 10A TO220F

0

FMEN-230A

FMEN-230A

Sanken Electric Co., Ltd.

DIODE ARRAY SCHOTTKY 100V TO220F

0

FMEN-2208

FMEN-2208

Sanken Electric Co., Ltd.

DIODE ARRAY SCHOTTKY 80V TO220

0

FMB-2204

FMB-2204

Sanken Electric Co., Ltd.

DIODE ARRAY SCHOTTKY 40V TO220F

0

FMG-24S

FMG-24S

Sanken Electric Co., Ltd.

DIODE ARRAY GP 400V 8A TO220F

0

FMW-24H

FMW-24H

Sanken Electric Co., Ltd.

DIODE ARRAY SCHOTTKY 40V TO220F

0

FMJ-2303

FMJ-2303

Sanken Electric Co., Ltd.

DIODE ARRAY SCHOTTKY 30V TO220F

0

FML-22S

FML-22S

Sanken Electric Co., Ltd.

DIODE ARRAY GP 200V 10A TO220F

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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