Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
FMKS-2052

FMKS-2052

Sanken Electric Co., Ltd.

DIODE FAST REC 200V 5A TO-220FP

898

FMX-23S

FMX-23S

Sanken Electric Co., Ltd.

DIODE ARRAY GP 300V 10A TO220F

393

FMX-22SL

FMX-22SL

Sanken Electric Co., Ltd.

DIODE ARRAY GP 200V 15A TO220-3

984

FMXA-2102ST

FMXA-2102ST

Sanken Electric Co., Ltd.

DIODE ARRAY GP 200V 10A TO220F

0

FMN-4306S

FMN-4306S

Sanken Electric Co., Ltd.

DIODE ARRAY GP 600V 15A TO3PF

64

FMM-26S

FMM-26S

Sanken Electric Co., Ltd.

DIODE ARRAY GP 600V 10A TO220F

833

FMB-24

FMB-24

Sanken Electric Co., Ltd.

DIODE ARRAY SCHOTTKY 40V TO220F

287

FMU-14R

FMU-14R

Sanken Electric Co., Ltd.

DIODE ARRAY GP 400V 5A TO220F

34

FMM-24R

FMM-24R

Sanken Electric Co., Ltd.

DIODE ARRAY GP 400V 10A TO220F

483

FMEN-430A

FMEN-430A

Sanken Electric Co., Ltd.

DIODE ARRAY SCHOTTKY 100V TO3PF

455

FMKS-2152

FMKS-2152

Sanken Electric Co., Ltd.

DIODE FAST REC 200V 15A TO-220FP

38

FMU-12S

FMU-12S

Sanken Electric Co., Ltd.

DIODE ARRAY GP 200V 5A TO220F

260

FMG-24R

FMG-24R

Sanken Electric Co., Ltd.

DIODE ARRAY GP 400V 8A TO220F

3756

FMM-22S

FMM-22S

Sanken Electric Co., Ltd.

DIODE ARRAY GP 200V 10A TO220F

31

FMU-16S

FMU-16S

Sanken Electric Co., Ltd.

DIODE ARRAY GP 600V 5A TO220F

495

FMU-12R

FMU-12R

Sanken Electric Co., Ltd.

DIODE ARRAY GP 200V 5A TO220F

246

FMXA-2153S

FMXA-2153S

Sanken Electric Co., Ltd.

DIODE ARRAY GP 300V 15A TO220F

482

FMU-24S

FMU-24S

Sanken Electric Co., Ltd.

DIODE ARRAY GP 400V 10A TO220F

140

FMX-4202S

FMX-4202S

Sanken Electric Co., Ltd.

DIODE ARRAY GP 200V 20A TO3PF

1

FMX-22S

FMX-22S

Sanken Electric Co., Ltd.

DIODE ARRAY GP 200V 10A TO220-3

262

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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