Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
FMEN-220B

FMEN-220B

Sanken Electric Co., Ltd.

DIODE ARRAY SCHOTTKY 150V TO220F

5

FMX-12S

FMX-12S

Sanken Electric Co., Ltd.

DIODE ARRAY GP 200V 5A TO220F

3154

FMB-29

FMB-29

Sanken Electric Co., Ltd.

DIODE ARRAY SCHOTTKY 90V TO220F

6090

FMB-24L

FMB-24L

Sanken Electric Co., Ltd.

DIODE ARRAY SCHOTTKY 40V TO220F

3

FMW-24L

FMW-24L

Sanken Electric Co., Ltd.

DIODE ARRAY SCHOTTKY 40V TO220F

237

FMW-2204

FMW-2204

Sanken Electric Co., Ltd.

DIODE ARRAY SCHOTTKY 40V TO220F

489

FM2-2202

FM2-2202

Sanken Electric Co., Ltd.

DIODE ARRAY GP 200V 20A TO220F

92

FMXA-2202S

FMXA-2202S

Sanken Electric Co., Ltd.

DIODE ARRAY GP 200V 20A TO220F

403

FMU-22R

FMU-22R

Sanken Electric Co., Ltd.

DIODE ARRAY GP 200V 10A TO220F

301

FMB-2304

FMB-2304

Sanken Electric Co., Ltd.

DIODE ARRAY SCHOTTKY 40V TO220F

305

FMW-4306

FMW-4306

Sanken Electric Co., Ltd.

DIODE ARRAY SCHOTTKY 60V TO220F

487

FMEN-210A

FMEN-210A

Sanken Electric Co., Ltd.

DIODE ARRAY SCHOTTKY 100V TO220F

132

FMW-2206

FMW-2206

Sanken Electric Co., Ltd.

DIODE ARRAY SCHOTTKY 60V TO220F

476

FMB-26

FMB-26

Sanken Electric Co., Ltd.

DIODE ARRAY SCHOTTKY 60V TO220F

393

FMU-16R

FMU-16R

Sanken Electric Co., Ltd.

DIODE ARRAY GP 600V 5A TO220F

484

FMW-2156

FMW-2156

Sanken Electric Co., Ltd.

DIODE ARRAY SCHOTTKY 60V TO220F

252

FMU-22S

FMU-22S

Sanken Electric Co., Ltd.

DIODE ARRAY GP 200V 10A TO220F

81

FMB-29L

FMB-29L

Sanken Electric Co., Ltd.

DIODE ARRAY SCHOTTKY 90V TO220F

129

FMD-4206S

FMD-4206S

Sanken Electric Co., Ltd.

DIODE ARRAY GP 600V 20A TO3PF

15

FML-4204S

FML-4204S

Sanken Electric Co., Ltd.

DIODE ARRAY GP 400V 20A TO3PF

7

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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