Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
FMXA-2203S

FMXA-2203S

Sanken Electric Co., Ltd.

DIODE ARRAY GP 300V 20A TO220F

323

FML-14S

FML-14S

Sanken Electric Co., Ltd.

DIODE ARRAY GP 400V 5A TO220F

178

FMU-14S

FMU-14S

Sanken Electric Co., Ltd.

DIODE ARRAY GP 400V 5A TO220F

260

FMX-4203S

FMX-4203S

Sanken Electric Co., Ltd.

DIODE ARRAY GP 300V 20A TO3PF

485

FMC-26U

FMC-26U

Sanken Electric Co., Ltd.

DIODE ARRAY GP 600V 3A TO220F

66

FMN-2206S

FMN-2206S

Sanken Electric Co., Ltd.

DIODE ARRAY GP 600V 20A TO220F

4090

FML-12S

FML-12S

Sanken Electric Co., Ltd.

DIODE ARRAY GP 200V 5A TO220F

443

FML-23S

FML-23S

Sanken Electric Co., Ltd.

DIODE ARRAY GP 300V 10A TO220F

314

FMB-24H

FMB-24H

Sanken Electric Co., Ltd.

DIODE ARRAY SCHOTTKY 40V TO220F

4049

FMM-22R

FMM-22R

Sanken Electric Co., Ltd.

DIODE ARRAY GP 200V 10A TO220F

773

FMKS-2102

FMKS-2102

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 200V 10A TO220FP

892

FMW-2106

FMW-2106

Sanken Electric Co., Ltd.

DIODE ARRAY SCHOTTKY 60V TO220F

214

FMXA-4203S

FMXA-4203S

Sanken Electric Co., Ltd.

DIODE ARRAY GP 300V 20A TO3PF

0

FMB-24M

FMB-24M

Sanken Electric Co., Ltd.

DIODE ARRAY SCHOTTKY 40V TO220F

345

FML-13S

FML-13S

Sanken Electric Co., Ltd.

DIODE ARRAY GP 300V 5A TO220F

2960

FML-4202S

FML-4202S

Sanken Electric Co., Ltd.

DIODE ARRAY GP 200V 20A TO3PF

783

FMU-24R

FMU-24R

Sanken Electric Co., Ltd.

DIODE ARRAY GP 400V 10A TO220F

168

FMEN-210B

FMEN-210B

Sanken Electric Co., Ltd.

DIODE ARRAY SCHOTTKY 150V TO220F

7835

FMU-26S

FMU-26S

Sanken Electric Co., Ltd.

DIODE ARRAY GP 600V 10A TO220F

4366

FMD-4204S

FMD-4204S

Sanken Electric Co., Ltd.

DIODE ARRAY GP 400V 20A TO3PF

261

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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