Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
HSD88KRF-E

HSD88KRF-E

Renesas Electronics America

SCHOTTKY BARRIER DIODE

16000

RKD702KL-1N#R1

RKD702KL-1N#R1

Renesas Electronics America

SCHOTTKY BARRIER DIODE

450000

HSB276ASTL-E

HSB276ASTL-E

Renesas Electronics America

SCHOTTKY BARRIER DIODE

0

1S2074H-E

1S2074H-E

Renesas Electronics America

DIODE FOR HIGH SPEED SWITCHING

603934

1S2076ATD-E-Q

1S2076ATD-E-Q

Renesas Electronics America

DIODE FOR HIGH SPEED SWITCHING

123843

1S2075KOKTA-E

1S2075KOKTA-E

Renesas Electronics America

DIODE FOR HIGH SPEED SWITCHING

0

1S953-T2

1S953-T2

Renesas Electronics America

HIGH SPEED SWITCHING DIODE

20935

1S2836(0)-T1B-A

1S2836(0)-T1B-A

Renesas Electronics America

HIGH SPEED DOUBLE DIODE

63000

HRC0201ATRF-E

HRC0201ATRF-E

Renesas Electronics America

SCHOTTKY DIODE

246578

HSU88TRF-E

HSU88TRF-E

Renesas Electronics America

SCHOTTKY BARRIER DIODE

9736

1S2076AS7A

1S2076AS7A

Renesas Electronics America

DIODE FOR HIGH SPEED SWITCHING

0

HSB278STR-E

HSB278STR-E

Renesas Electronics America

SCHOTTKY BARRIER DIODE

30000

RKD703KL#R1

RKD703KL#R1

Renesas Electronics America

SCHOTTKY BARRIER DIODE

80000

HSM107S-JTL

HSM107S-JTL

Renesas Electronics America

SCHOTTKY BARRIER DIODE

9000

HRU0103A2TRF-E

HRU0103A2TRF-E

Renesas Electronics America

SCHOTTKY DIODE

18000

HSD276AKRF-E

HSD276AKRF-E

Renesas Electronics America

SCHOTTKY BARRIER DIODE

41821

HSU119-2TRF-E

HSU119-2TRF-E

Renesas Electronics America

SCHOTTKY BARRIER DIODE

8536

HRC0203B-NTRF-E

HRC0203B-NTRF-E

Renesas Electronics America

SCHOTTKY DIODE

2164000

1S2838-T2B-A

1S2838-T2B-A

Renesas Electronics America

HIGH SPEED DOUBLE DIODE

210000

HSM126S-JTR-E

HSM126S-JTR-E

Renesas Electronics America

SCHOTTKY BARRIER DIODE

6533

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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