Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
1S2076A90TA-E

1S2076A90TA-E

Renesas Electronics America

DIODE FOR HIGH SPEED SWITCHING

7000

1S2076JTD

1S2076JTD

Renesas Electronics America

DIODE FOR HIGH SPEED SWITCHING

25000

HRB0502A-JTR-E

HRB0502A-JTR-E

Renesas Electronics America

SCHOTTKY DIODE

18000

1S953-TB

1S953-TB

Renesas Electronics America

HIGH SPEED SWITCHING DIODE

30000

HSU119-91TRF-E

HSU119-91TRF-E

Renesas Electronics America

SCHOTTKY BARRIER DIODE

141000

HSM88ASTR-E

HSM88ASTR-E

Renesas Electronics America

SCHOTTKY BARRIER DIODE

0

1S953-T1-AZ

1S953-T1-AZ

Renesas Electronics America

HIGH SPEED SWITCHING DIODE

0

HSU285JTRF-E

HSU285JTRF-E

Renesas Electronics America

SCHOTTKY BARRIER DIODE

132000

1S2075K-JTD

1S2075K-JTD

Renesas Electronics America

DIODE FOR HIGH SPEED SWITCHING

20000

RKR0503BKJ-1#R1

RKR0503BKJ-1#R1

Renesas Electronics America

SCHOTTKY BARRIER DIODE

104000

HRL0103CKRF-E

HRL0103CKRF-E

Renesas Electronics America

SCHOTTKY DIODE

40000

HSU227TRF-E

HSU227TRF-E

Renesas Electronics America

SCHOTTKY BARRIER DIODE

18000

HSC226-1TRF-E

HSC226-1TRF-E

Renesas Electronics America

SCHOTTKY BARRIER DIODE

80000

HRC0203BTRF-E

HRC0203BTRF-E

Renesas Electronics America

SCHOTTKY DIODE

16000

HSB0104YPTL-E

HSB0104YPTL-E

Renesas Electronics America

SCHOTTKY BARRIER DIODE

121940

1S953(3)-T2

1S953(3)-T2

Renesas Electronics America

HIGH SPEED SWITCHING DIODE

10000

HSU119-1URF-E

HSU119-1URF-E

Renesas Electronics America

SCHOTTKY BARRIER DIODE

50000

HSU276ATRF-E

HSU276ATRF-E

Renesas Electronics America

SCHOTTKY BARRIER DIODE

66000

1S953-T4-AZ

1S953-T4-AZ

Renesas Electronics America

HIGH SPEED SWITCHING DIODE

337000

HSU119-90TRF-E

HSU119-90TRF-E

Renesas Electronics America

SCHOTTKY BARRIER DIODE

279000

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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