Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
DD500S33HE3BPSA1

DD500S33HE3BPSA1

IR (Infineon Technologies)

DD500S33 - RECTIFIER DIODE MODUL

102

VF30200C-E3/4W

VF30200C-E3/4W

Vishay General Semiconductor – Diodes Division

DIODE ARRAY SCHOTTKY 200V ITO220

1029

RBR30T30ANZC9

RBR30T30ANZC9

ROHM Semiconductor

RBR30T30ANZ IS LOW VF

1000

MURTA60060R

MURTA60060R

GeneSiC Semiconductor

DIODE MODULE 600V 600A 3TOWER

0

MURT30010

MURT30010

GeneSiC Semiconductor

DIODE MODULE 100V 300A 3TOWER

0

FMN-2206S

FMN-2206S

Sanken Electric Co., Ltd.

DIODE ARRAY GP 600V 20A TO220F

4090

FML-12S

FML-12S

Sanken Electric Co., Ltd.

DIODE ARRAY GP 200V 5A TO220F

443

VS-12CTQ045STRL-M3

VS-12CTQ045STRL-M3

Vishay General Semiconductor – Diodes Division

DIODE SCHOTTKY 45V 6A D2PAK

0

MBR2X050A060

MBR2X050A060

GeneSiC Semiconductor

DIODE SCHOTTKY 60V 50A SOT227

0

DSA30C100QB

DSA30C100QB

Wickmann / Littelfuse

DIODE ARRAY SCHOTTKY 100V TO3P

30

RB481KTL

RB481KTL

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 30V UMD4

964

STPS3045CR

STPS3045CR

STMicroelectronics

DIODE ARRAY SCHOTTKY 45V I2PAK

0

STTH30L06CG-TR

STTH30L06CG-TR

STMicroelectronics

DIODE ARRAY GP 600V 20A D2PAK

907

VS-6CVH01HM3/I

VS-6CVH01HM3/I

Vishay General Semiconductor – Diodes Division

DIODE GEN PURPOSE 100V SLIMDPAK

4497

V60DM45CHM3/I

V60DM45CHM3/I

Vishay General Semiconductor – Diodes Division

DIODE ARRAY SCHOTTKY 45V TO263AC

1994

VS-MUR1020CT-M3

VS-MUR1020CT-M3

Vishay General Semiconductor – Diodes Division

DIODE FRED 200V 5A TO220AB

86

SBR1045CT

SBR1045CT

SMC Diode Solutions

DIODE SCHOTTKY 45V TO220AB

0

MSRT150100(A)

MSRT150100(A)

GeneSiC Semiconductor

DIODE MODULE 1KV 150A 3TOWER

0

DD500S65K3NOSA1

DD500S65K3NOSA1

IR (Infineon Technologies)

DIODE MODULE VCES 3300V 500A

0

SBRT40V100CTFP

SBRT40V100CTFP

Zetex Semiconductors (Diodes Inc.)

DIODE SBR 100V 20A POWERDI5

1200

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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