Diodes - Bridge Rectifiers

Part Number	Description / PDF	Quantity
TS35P05G C2G TSC (Taiwan Semiconductor)	BRIDGE RECT 1P 600V 35A TS-6P	1019
GBPC2508M T0G TSC (Taiwan Semiconductor)	BRIDGE RECT 1P 800V 25A GBPC-M	0
GBPC2504 T0G TSC (Taiwan Semiconductor)	BRIDGE RECT 1PHASE 400V 25A GBPC	0
TBS410 M1G TSC (Taiwan Semiconductor)	4A 1000V STANDARD BRIDGE RECTIFI	2169
DBL107G C1G TSC (Taiwan Semiconductor)	BRIDGE RECT 1PHASE 1KV 1A DBL	200
GBPC1502W T0G TSC (Taiwan Semiconductor)	BRIDGE RECT 1P 200V 15A GBPC-W	0
DBL104GHC1G TSC (Taiwan Semiconductor)	BRIDGE RECT 1PHASE 400V 1A DBL	0
GBPC2502M T0G TSC (Taiwan Semiconductor)	BRIDGE RECT 1P 200V 25A GBPC-M	0
DBL155GHC1G TSC (Taiwan Semiconductor)	BRIDGE RECT 1PHASE 600V 1.5A DBL	0
UR8KB80 C2G TSC (Taiwan Semiconductor)	BRIDGE RECT 1PHASE 800V 8A D3K	0
GBL08 D2G TSC (Taiwan Semiconductor)	BRIDGE RECT 1PHASE 800V 4A GBL	10151
TS25P03GHC2G TSC (Taiwan Semiconductor)	BRIDGE RECT 1P 200V 25A TS-6P	0
EABS1G REG TSC (Taiwan Semiconductor)	BRIDGE RECT 1PHASE 400V 1A ABS	0
TS50P07GHD2G TSC (Taiwan Semiconductor)	BRIDGE RECT 1PHASE 1KV 50A TS-6P	0
GBU401 D2G TSC (Taiwan Semiconductor)	BRIDGE RECT 1PHASE 50V 4A GBU	0
GBPC4010M T0G TSC (Taiwan Semiconductor)	BRIDGE RECT 1P 1KV 40A GBPC40-M	0
SBS36HREG TSC (Taiwan Semiconductor)	BRIDGE RECT 1PHASE 60V 3A ABS	0
RABS15M REG TSC (Taiwan Semiconductor)	BRIDGE RECT 1P 1KV 1.5A ABS-L	0
TS6P05G C2G TSC (Taiwan Semiconductor)	BRIDGE RECT 1PHASE 600V 6A TS-6P	0
DBL204GHC1G TSC (Taiwan Semiconductor)	BRIDGE RECT 1PHASE 400V 2A DBL	0

Diodes - Bridge Rectifiers

1. Overview

Bridge rectifiers are discrete semiconductor devices that convert alternating current (AC) to direct current (DC) using a bridge configuration of four or more diodes. They are fundamental components in power supply circuits, enabling efficient energy conversion in electronic systems. Their importance lies in providing reliable rectification for applications ranging from consumer electronics to industrial machinery, ensuring compatibility between AC power sources and DC-powered devices.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
Single-Phase Full-Wave Bridge	Rectifies both AC half-cycles, low ripple output	Switching power supplies, battery chargers
Three-Phase Bridge Rectifier	Handles three-phase AC inputs, higher efficiency	Industrial motor drives, renewable energy inverters
High-Voltage Bridge	Rated for >1000V reverse voltage	Electric vehicle charging stations, HVDC systems
Bridge Rectifier Module	Integrated heat sink, multi-pin package	High-power audio amplifiers, welding equipment

3. Structure and Components

A standard bridge rectifier consists of 4 diodes arranged in a closed-loop "bridge" configuration. The diodes are typically silicon-based PN-junction or Schottky barrier structures. The package uses epoxy resin encapsulation with metal terminals for AC/DC connections. Advanced designs incorporate:

Thermal vias for heat dissipation
Gold-aluminum wire bonds for conductivity
Integrated snubber circuits for voltage spike suppression

4. Key Technical Specifications

Parameter	Description	Importance
Max Average Rectified Current (IO)	Maximum continuous DC current rating	Determines power handling capability
Reverse Peak Voltage (VRRM)	Maximum allowable reverse voltage	Prevents breakdown under AC peak voltages
Forward Voltage Drop (VF)	Voltage loss during conduction	Impacts efficiency and thermal design
Operating Temperature Range	Valid temperature range for functionality	Affects reliability in extreme environments
Reverse Recovery Time (trr)	Time to switch from conduction to blocking	Critical for high-frequency applications

5. Application Fields

Power Electronics: AC-DC converters in PCs/servers
Automotive: Alternator rectification in combustion engines
Renewables: Solar inverter input stage
Consumer: LED driver circuits in TVs
Industrial: CNC machine tool power supplies

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
ON Semiconductor	MB10F Series	1A average current, 600V VRRM, high surge capability
STMicroelectronics	DBL60V120SG	Three-phase 600V, integrated TVS protection
Vishay Intertechnology	KBU8M	800V rating, 8A average current, compact package
Diodes Inc.	GBU606	600V, 6A, low leakage current

7. Selection Recommendations

Consider the following factors during component selection:

Calculate required IO with 20% safety margin
Select VRRM >1.5 expected AC peak voltage
Choose low VF devices for >85% efficiency
Match package thermal characteristics to cooling solution
For high-frequency use, prioritize trr <50ns

8. Industry Trends

Future development focuses on:

Wide bandgap (SiC/GaN) bridges for 98%+ efficiency
3D-printed heat spreader integration
Smart rectifiers with built-in current sensing
Automotive-grade modules for 800V EV systems
Lead-free packaging meeting RoHS 3.0 standards

Market growth driven by renewable energy systems and electric vehicle adoption, projected at 6.2% CAGR through 2030 (Source: Yole D veloppement).