TVS - Mixed Technology

Image Part Number Description / PDF Quantity Rfq
IXBOD1-19R

IXBOD1-19R

Wickmann / Littelfuse

IC DIODE MODULE BOD 1.25A 1900V

16

IXBOD1-23RD

IXBOD1-23RD

Wickmann / Littelfuse

IC DIODE MODULE BOD 0.2A 2300V

20

IXBOD1-12R

IXBOD1-12R

Wickmann / Littelfuse

IC DIODE MODULE BOD 1.25A 1200V

40

IXBOD1-21R

IXBOD1-21R

Wickmann / Littelfuse

IC DIODE MODULE BOD 0.9A 2100V

80

IXBOD1-18R

IXBOD1-18R

Wickmann / Littelfuse

IC DIODE MODULE BOD 1.25A 1800V

0

IXBOD1-16R

IXBOD1-16R

Wickmann / Littelfuse

IC DIODE MODULE BOD 1.25A 1600V

260

IXBOD1-17RD

IXBOD1-17RD

Wickmann / Littelfuse

IC DIODE MODULE BOD 0.2A 1700V

20

B2050CALRP

B2050CALRP

Wickmann / Littelfuse

BATTRAX SGL POS 5MA 50A DO214

0

IXBOD1-30RD

IXBOD1-30RD

Wickmann / Littelfuse

IC DIODE MODULE BOD 0.2A 3000V

0

IXBOD1-26RD

IXBOD1-26RD

Wickmann / Littelfuse

IC DIODE MODULE BOD 0.2A 2600V

0

IXBOD1-22RD

IXBOD1-22RD

Wickmann / Littelfuse

IC DIODE MODULE BOD 0.2A 2200V

180

IXBOD1-20RD

IXBOD1-20RD

Wickmann / Littelfuse

IC DIODE MODULE BOD 0.2A 2000V

0

IXBOD1-32RD

IXBOD1-32RD

Wickmann / Littelfuse

IC DIODE MODULE BOD 0.2A 3200V

20

SP725AATG

SP725AATG

Wickmann / Littelfuse

4 CH 14A 30V SCR MSOP10

0

IXBOD1-16RD

IXBOD1-16RD

Wickmann / Littelfuse

IC DIODE MODULE BOD 0.2A 1600V

0

IXBOD1-14R

IXBOD1-14R

Wickmann / Littelfuse

IC DIODE MODULE BOD 1.25A 1400V

0

IXBOD1-07

IXBOD1-07

Wickmann / Littelfuse

IC SGL DIODE BOD 0.9A 700V FP

0

IXBOD1-13R

IXBOD1-13R

Wickmann / Littelfuse

IC DIODE MODULE BOD 1.25A 1300V

0

IXBOD1-20R

IXBOD1-20R

Wickmann / Littelfuse

IC DIODE MODULE BOD 0.9A 2000V

0

IXBOD1-13RD

IXBOD1-13RD

Wickmann / Littelfuse

IC DIODE MODULE BOD 0.2A 1300V

0

TVS - Mixed Technology

1. Overview

Mixed Technology TVS devices combine multiple semiconductor materials and protection mechanisms to achieve superior transient voltage suppression performance. These hybrid solutions integrate silicon-based avalanche diodes, polymer-based ESD protection, and advanced packaging technologies to address complex electromagnetic interference (EMI) challenges in modern electronics. Their importance grows with the increasing demand for reliable protection in high-speed data lines, power systems, and sensitive ICs across industrial, automotive, and consumer applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Silicon-Polymer Hybrid TVSCombines fast silicon diode response with polymer self-recovery capabilityUSB 3.2 interfaces, HDMI ports
Multi-Layer Varistor-TVSStacked silicon layers for multi-stage voltage clampingIndustrial power supplies, 5G base stations
Glass-Passivated Hybrid TVSHermetic glass encapsulation with integrated RC filteringAutomotive sensors, medical devices

3. Structure and Composition

Typical mixed technology TVS devices feature a 3D heterogeneous integration structure:

  • Active layer: Silicon carbide (SiC) or gallium nitride (GaN) semiconductor matrix
  • Passivation layer: Borosilicate glass or polymer composite
  • Electrode system: Multi-fingered aluminum-copper hybrid metallization
  • Thermal management: Embedded graphite heat spreader
  • Package: Lead-free QFN or DFN with EMI shielding coating

4. Key Technical Parameters

ParameterImportance
Breakdown Voltage (Vbr)Determines protection threshold for normal operation
Clamping Voltage (Vc)Defines maximum voltage transmitted to protected circuit
Response Time (tr)Measures speed of transition from blocking to conducting state
Power Dissipation (Pppm)Indicates energy absorption capability during transients
Capacitance (Cj)Critical for high-speed signal integrity preservation
Operating TemperatureDefines environmental reliability range (-55 C to +150 C typical)

5. Application Fields

Major industries utilizing mixed technology TVS devices include:

  • Telecommunications: 5G NR base stations, optical transceivers
  • Industrial Automation: PLC systems, motor drives
  • Automotive Electronics: CAN-FD interfaces, LiDAR systems
  • Consumer Devices: Smartphone charging ports, AR/VR headsets

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
LittelfuseSMxxxHCA Series40kV ESD protection, 0.5pF capacitance, 0.1ns response
STMicroelectronicsTVSH SeriesAutomotive qualified, AEC-Q101 certified, 300W peak power
BournsPGB1 SeriesMulti-layer ceramic-silicon hybrid, 10Gbps data rate support

7. Selection Guidelines

Key considerations when selecting mixed technology TVS components:

  • Match breakdown voltage to system operating voltage (typically 10-15% margin)
  • Verify clamping voltage compatibility with protected IC's maximum ratings
  • Consider parasitic capacitance for high-speed (>1Gbps) applications
  • Evaluate thermal derating curves for intended operating environment
  • Check compliance with industry standards (IEC 61000-4-2, ISO 10605)
  • Assess packaging requirements (SMD vs through-hole, board space constraints)

8. Industry Trends

Emerging developments in mixed technology TVS field include:

  • Integration of AI-based predictive protection algorithms
  • Development of 3D-printed nanocomposite TVS structures
  • Adoption of wafer-level packaging for 0.1pF capacitance levels
  • Implementation of energy recovery features in hybrid architectures
  • Advancements in terahertz transient suppression materials
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