TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
MXLP5KE13CA

MXLP5KE13CA

Microsemi

TVS DIODE 13V 21.5V DO204AL

0

MPLAD6.5KP130AE3

MPLAD6.5KP130AE3

Microsemi

TVS DIODE 130V 209V PLAD

0

MXP5KE8.5CA

MXP5KE8.5CA

Microsemi

TVS DIODE 8.5V 14.4V DO204AL

0

MP5KE30A

MP5KE30A

Microsemi

TVS DIODE 30V 48.4V DO204AL

0

SMCJ5650/TR13

SMCJ5650/TR13

Microsemi

TVS DIODE 41.3V 73.5V DO214AB

0

1.5KE11AE3/TR13

1.5KE11AE3/TR13

Microsemi

TVS DIODE 9.4V 15.6V CASE-1

0

MAP5KE30CA

MAP5KE30CA

Microsemi

TVS DIODE 30V 48.4V DO204AL

0

MP5KE6.5A

MP5KE6.5A

Microsemi

TVS DIODE 6.5V 11.2V DO204AL

0

MAP5KE160CAE3

MAP5KE160CAE3

Microsemi

TVS DIODE 160V 259V DO204AL

0

1.5KE20CAE3/TR13

1.5KE20CAE3/TR13

Microsemi

TVS DIODE 17.1V 27.7V CASE-1

0

MPLAD6.5KP130CA

MPLAD6.5KP130CA

Microsemi

TVS DIODE 130V 209V PLAD

0

SMCJ6063E3/TR13

SMCJ6063E3/TR13

Microsemi

TVS DIODE 81V 144V DO214AB

0

SMCJ6069E3/TR13

SMCJ6069E3/TR13

Microsemi

TVS DIODE 145V 274V DO214AB

0

SMCJ6053/TR13

SMCJ6053/TR13

Microsemi

TVS DIODE 31V 56.4V DO214AB

0

MAP5KE20AE3

MAP5KE20AE3

Microsemi

TVS DIODE 20V 32.4V DO204AL

0

SMCJ5664/TR13

SMCJ5664/TR13

Microsemi

TVS DIODE 146V 258V DO214AB

0

MSMBG2K3.0E3

MSMBG2K3.0E3

Microsemi

TVS DIODE 3V 5.4V DO215AA

0

MXP5KE100AE3

MXP5KE100AE3

Microsemi

TVS DIODE 100V 162V DO204AL

0

MAP5KE100CAE3

MAP5KE100CAE3

Microsemi

TVS DIODE 100V 162V DO204AL

0

SMCJ6038AE3/TR13

SMCJ6038AE3/TR13

Microsemi

TVS DIODE 7.5V 13.4V DO214AB

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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