TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
MXSMLJ13CA

MXSMLJ13CA

Roving Networks / Microchip Technology

TVS DIODE 13V 21.5V DO214AB

0

MASMBJSAC26E3

MASMBJSAC26E3

Roving Networks / Microchip Technology

TVS DIODE 26V 42.3V DO214AA

0

MXP4KE62AE3

MXP4KE62AE3

Roving Networks / Microchip Technology

TVS DIODE 53V 85V DO204AL

0

MPLAD30KP36AE3

MPLAD30KP36AE3

Roving Networks / Microchip Technology

TVS DIODE 36V 58.1V PLAD

0

MXP4KE6.8A

MXP4KE6.8A

Roving Networks / Microchip Technology

TVS DIODE 5.8V 10.5V DO204AL

0

MSMCJ130AE3

MSMCJ130AE3

Roving Networks / Microchip Technology

TVS DIODE 130V 209V DO214AB

0

MSMCJLCE16AE3

MSMCJLCE16AE3

Roving Networks / Microchip Technology

TVS DIODE 16V 26V DO214AB

0

MASMBJSAC75

MASMBJSAC75

Roving Networks / Microchip Technology

TVS DIODE 75V 121V DO214AA

0

MXSMBG20CA

MXSMBG20CA

Roving Networks / Microchip Technology

TVS DIODE 20V 32.4V DO215AA

0

MAP4KE300AE3

MAP4KE300AE3

Roving Networks / Microchip Technology

TVS DIODE 256V 414V DO204AL

0

MPLAD15KP60CA

MPLAD15KP60CA

Roving Networks / Microchip Technology

TVS DIODE 60V 96.8V PLAD

0

MXP4KE350AE3

MXP4KE350AE3

Roving Networks / Microchip Technology

TVS DIODE 300V 482V DO204AL

0

MXLSMBJ48CA

MXLSMBJ48CA

Roving Networks / Microchip Technology

TVS DIODE 48V 77.4V DO214AA

0

MXL5KP7.0AE3

MXL5KP7.0AE3

Roving Networks / Microchip Technology

TVS DIODE 7V 12V CASE 5A

0

MA5KP58CA

MA5KP58CA

Roving Networks / Microchip Technology

TVS DIODE 58V 93.6V DO204AR

0

MART100KP64AE3

MART100KP64AE3

Roving Networks / Microchip Technology

TVS DIODE 64V 126V CASE 5A

0

M5KP36AE3

M5KP36AE3

Roving Networks / Microchip Technology

TVS DIODE 36V 58.1V DO204AR

0

MA15KP170AE3

MA15KP170AE3

Roving Networks / Microchip Technology

TVS DIODE 170V 275V DO204AR

0

MPLAD15KP17CAE3

MPLAD15KP17CAE3

Roving Networks / Microchip Technology

TVS DIODE 17V 27.6V PLAD

0

MXSMLJ14CAE3

MXSMLJ14CAE3

Roving Networks / Microchip Technology

TVS DIODE 14V 23.2V DO214AB

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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