TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
MXL5KP10AE3

MXL5KP10AE3

Roving Networks / Microchip Technology

TVS DIODE 10V 17V CASE 5A

0

MXLSMBG12A

MXLSMBG12A

Roving Networks / Microchip Technology

TVS DIODE 12V 19.9V DO215AA

0

SMCJ54CAE3/TR13

SMCJ54CAE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 54V 87.1V DO214AB

0

SMCJ6.0CE3/TR13

SMCJ6.0CE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 6V 11.4V DO214AB

0

SMAJ250AE3/TR13

SMAJ250AE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 250V DO214AC

0

MP4KE350AE3

MP4KE350AE3

Roving Networks / Microchip Technology

TVS DIODE 300V 482V DO204AL

0

MXSMLJ12AE3

MXSMLJ12AE3

Roving Networks / Microchip Technology

TVS DIODE 12V 19.9V DO214AB

0

MXLSMCJLCE11A

MXLSMCJLCE11A

Roving Networks / Microchip Technology

TVS DIODE 11V 18.2V DO214AB

0

MRT100KP180CA

MRT100KP180CA

Roving Networks / Microchip Technology

TVS DIODE 180V 354V CASE 5A

0

MXSMBG100A

MXSMBG100A

Roving Networks / Microchip Technology

TVS DIODE 100V 162V DO215AA

0

MSMLJ13CAE3

MSMLJ13CAE3

Roving Networks / Microchip Technology

TVS DIODE 13V 21.5V DO214AB

0

SMAJ5.0CE3/TR13

SMAJ5.0CE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 5V 9.6V DO214AC

0

USB50403E3/TR7

USB50403E3/TR7

Roving Networks / Microchip Technology

TVS DIODE 3.3V 11V SOT143

0

MSMBJ11CA

MSMBJ11CA

Roving Networks / Microchip Technology

TVS DIODE 11V 18.2V DO214AA

199

MXSMCJLCE160AE3

MXSMCJLCE160AE3

Roving Networks / Microchip Technology

TVS DIODE 160V 259V DO214AB

0

SMCJ350CE3/TR13

SMCJ350CE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 350V DO214AB

0

MXRT100KP45A

MXRT100KP45A

Roving Networks / Microchip Technology

TVS DIODE 45V 88.5V CASE 5A

0

MP4KE22AE3

MP4KE22AE3

Roving Networks / Microchip Technology

TVS DIODE 18.8V 30.6V DO204AL

0

1N6036A

1N6036A

Roving Networks / Microchip Technology

TVS DIODE 6V 11.3V DO13

477

MXLSMBJ20AE3

MXLSMBJ20AE3

Roving Networks / Microchip Technology

TVS DIODE 20V 32.4V DO214AA

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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