TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
MASMCJ18A

MASMCJ18A

Roving Networks / Microchip Technology

TVS DIODE 18V 29.2V DO214AB

0

MXLRT100KP60A

MXLRT100KP60A

Roving Networks / Microchip Technology

TVS DIODE 60V 118V CASE 5A

0

MXSMCJLCE30A

MXSMCJLCE30A

Roving Networks / Microchip Technology

TVS DIODE 30V 48.4V DO214AB

0

MXRT100KP280CA

MXRT100KP280CA

Roving Networks / Microchip Technology

TVS DIODE 280V 552V CASE 5A

0

MXP4KE6.8AE3

MXP4KE6.8AE3

Roving Networks / Microchip Technology

TVS DIODE 5.8V 10.5V DO204AL

0

MXL15KP85CA

MXL15KP85CA

Roving Networks / Microchip Technology

TVS DIODE 85V 137V CASE 5A

0

SMLJ7.0CAE3/TR13

SMLJ7.0CAE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 7V 12V DO214AB

0

MP4KE7.5CA

MP4KE7.5CA

Roving Networks / Microchip Technology

TVS DIODE 6.4V 11.3V DO204AL

0

MASMCJ78AE3

MASMCJ78AE3

Roving Networks / Microchip Technology

TVS DIODE 78V 126V DO214AB

0

M15KP200AE3

M15KP200AE3

Roving Networks / Microchip Technology

TVS DIODE 200V 322V DO204AR

0

MASMBJ45AE3

MASMBJ45AE3

Roving Networks / Microchip Technology

TVS DIODE 45V 72.7V DO214AA

0

MXP4KE27CAE3

MXP4KE27CAE3

Roving Networks / Microchip Technology

TVS DIODE 23.1V 37.5V DO204AL

0

MSMBJ10A

MSMBJ10A

Roving Networks / Microchip Technology

TVS DIODE 10V 17V DO214AA

0

MXSMLJ13A

MXSMLJ13A

Roving Networks / Microchip Technology

TVS DIODE 13V 21.5V DO214AB

46

MXL15KP85AE3

MXL15KP85AE3

Roving Networks / Microchip Technology

TVS DIODE 85V 137V CASE 5A

0

MXLSMLJ60A

MXLSMLJ60A

Roving Networks / Microchip Technology

TVS DIODE 60V 96.8V DO214AB

0

MXLSMBG54A

MXLSMBG54A

Roving Networks / Microchip Technology

TVS DIODE 54V 87.1V DO215AA

0

MSMBG75CA

MSMBG75CA

Roving Networks / Microchip Technology

TVS DIODE 75V 121V DO215AA

0

MXRT100KP54A

MXRT100KP54A

Roving Networks / Microchip Technology

TVS DIODE 54V 106V CASE 5A

0

MA1.5KE7.5CAE3

MA1.5KE7.5CAE3

Roving Networks / Microchip Technology

TVS DIODE 6.4V 11.3V DO204AR

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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