TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
SMF13A RVG

SMF13A RVG

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL

5500

1KSMB30CAHR5G

1KSMB30CAHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 25.6V 41.4V DO214AA

0

SMDJ24A V6G

SMDJ24A V6G

TSC (Taiwan Semiconductor)

TVS DIODE 24V 38.9V DO214AB

0

SMA4S30AH

SMA4S30AH

TSC (Taiwan Semiconductor)

400W, 10V - 70V, SMD TVS PG STRU

6975

BZW06-273 A0G

BZW06-273 A0G

TSC (Taiwan Semiconductor)

TVS DIODE 273V 564V DO204AC

0

P4SMA20CAHM2G

P4SMA20CAHM2G

TSC (Taiwan Semiconductor)

TVS DIODE 17.1V 27.7V DO214AC

0

SMAJ45AHM2G

SMAJ45AHM2G

TSC (Taiwan Semiconductor)

TVS DIODE 45V 72.7V DO214AC

0

P4KE27A A0G

P4KE27A A0G

TSC (Taiwan Semiconductor)

TVS DIODE 23.1V 37.5V DO204AL

0

P4SMA13CAHR3G

P4SMA13CAHR3G

TSC (Taiwan Semiconductor)

TVS DIODE 11.1V 18.2V DO214AC

0

SMDJ51CAHR7G

SMDJ51CAHR7G

TSC (Taiwan Semiconductor)

TVS DIODE 51V 82.4V DO214AB

0

SMAJ22CA R3G

SMAJ22CA R3G

TSC (Taiwan Semiconductor)

TVS DIODE 22V 35.5V DO214AC

0

P6KE68CAHB0G

P6KE68CAHB0G

TSC (Taiwan Semiconductor)

TVS DIODE 58.1V 92V DO204AC

0

SMAJ11CAHM2G

SMAJ11CAHM2G

TSC (Taiwan Semiconductor)

TVS DIODE 11V 18.2V DO214AC

0

1KSMB10AHR5G

1KSMB10AHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 8.55V 14.5V DO214AA

0

P6KE51A R0G

P6KE51A R0G

TSC (Taiwan Semiconductor)

TVS DIODE 43.6V 70.1V DO204AC

0

SA6.0CA B0G

SA6.0CA B0G

TSC (Taiwan Semiconductor)

TVS DIODE 6V 10.3V DO204AC

0

SA54A B0G

SA54A B0G

TSC (Taiwan Semiconductor)

TVS DIODE 54V 87.1V DO204AC

0

P6SMB68CAHR5G

P6SMB68CAHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 58.1V 92V DO214AA

0

SA170A B0G

SA170A B0G

TSC (Taiwan Semiconductor)

TVS DIODE 170V 275V DO204AC

0

P6SMB220CAHR5G

P6SMB220CAHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 185V 328V DO214AA

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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