TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
SMA6J24A R3G

SMA6J24A R3G

TSC (Taiwan Semiconductor)

TVS DIODE 24V 37.8V DO214AC

2376

PGSMAJ54A R3G

PGSMAJ54A R3G

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL

3238

1.5SMC20CA M6G

1.5SMC20CA M6G

TSC (Taiwan Semiconductor)

TVS DIODE 17.1V 27.7V DO214AB

0

BZW04-273B R0G

BZW04-273B R0G

TSC (Taiwan Semiconductor)

TVS DIODE 273V 438V DO204AL

0

P4SMA36CA M2G

P4SMA36CA M2G

TSC (Taiwan Semiconductor)

TVS DIODE 30.8V 49.9V DO214AC

0

SMAJ7.0CAHM2G

SMAJ7.0CAHM2G

TSC (Taiwan Semiconductor)

TVS DIODE 7V 12V DO214AC

0

P6SMB43CAHM4G

P6SMB43CAHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 36.8V 59.3V DO214AA

0

SA100CAHA0G

SA100CAHA0G

TSC (Taiwan Semiconductor)

TVS DIODE 100V 162V DO204AC

0

SMBJ28CAHM4G

SMBJ28CAHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 28V 45.4V DO214AA

0

P6SMB170CAHM4G

P6SMB170CAHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 145V 234V DO214AA

0

PGSMAJ22A M2G

PGSMAJ22A M2G

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL, 400W

0

P6KE9.1AHR0G

P6KE9.1AHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 7.78V 13.4V DO204AC

0

P4SMA30CAHM2G

P4SMA30CAHM2G

TSC (Taiwan Semiconductor)

TVS DIODE 25.6V 41.4V DO214AC

0

1V5KE16CA

1V5KE16CA

TSC (Taiwan Semiconductor)

TVS DIODE 13.6V 22.5V DO201AE

0

SMF51A RVG

SMF51A RVG

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL, 200W

0

SA45CAHR0G

SA45CAHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 45V 72.7V DO204AC

0

P4SMA200CAHM2G

P4SMA200CAHM2G

TSC (Taiwan Semiconductor)

TVS DIODE 171V 274V DO214AC

0

1.5SMC18CAHR7G

1.5SMC18CAHR7G

TSC (Taiwan Semiconductor)

TVS DIODE 15.3V 25.5V DO214AB

0

P4SMA110A M2G

P4SMA110A M2G

TSC (Taiwan Semiconductor)

TVS DIODE 94V 152V DO214AC

0

SMAJ45CAHM2G

SMAJ45CAHM2G

TSC (Taiwan Semiconductor)

TVS DIODE 45V 72.7V DO214AC

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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