TVS - Diodes

Image	Part Number	Description / PDF	Quantity	Rfq
	TFMBJ51A Rectron USA	TVS DIO 600W 51V 82.4V UNI SMB	0
	P4SMAJ300A Rectron USA	TVS DIO 400W 300V 414V UNI SMA	0
	SMF210CA Rectron USA	TVS 200W 210V 386V BI SOD-123F	0
	4SMF7.0A Rectron USA	TVS 400W 7V 12V UNI SMAF	0
	1.5FMCJ62A Rectron USA	TVS DIODE 1500W 53V UNI SMC	0
	SM8S15A Rectron USA	TVS DIODE 8W 15V 24.4V DO-218	0
	3KPSMC18 Rectron USA	TVS DIODE 3KW 24.4V SMC	0
	TFMAJ17CA Rectron USA	TVS DIODE 400W 17V 276V BI SMA	0
	4SMF16A Rectron USA	TVS 400W 16V 26V UNI SMAF	0
	SM8S17 Rectron USA	TVS DIODE 8W 17V 30.5V DO-218	0
	P4FMAF27 Rectron USA	TVS DIO 400W 27V 39.1V UNI SMAF	0
	4SMF24A Rectron USA	TVS 400W 24V 38.9V UNI SMAF	0
	TFMBJ13A Rectron USA	TVS DIO 600W 13V 21.5V UNI SMB	0
	SMA6F150CA Rectron USA	TVS DIO 600W 150V 243V BI SMAF	0
	5.0SMCJ18A Rectron USA	TVS DIODE 5KW 18V 29.2V UNI SMC	0
	P6FMBJ510A Rectron USA	TVS DIO 600W 510V 698V UNI SMB	0
	3KPSMC64B Rectron USA	TVS DIODE 3KW 78.6V SMC	0
	SM8S28 Rectron USA	TVS DIODE 8W 28V 50.1V DO-218	0
	SMA6F78A Rectron USA	TVS DIO 600W 78V 126V UNI SMAF	0
	P6FMBJ16A Rectron USA	TVS DIO 600W 16V 22.5V UNI SMB	0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
Unidirectional TVS	Single-polarity protection, asymmetrical voltage response	DC power lines, automotive systems
Bidirectional TVS	Symmetrical protection for AC signals	Telecom interfaces (e.g., RJ45), USB 3.0	Multichannel TVS	Multiple protection paths in single package	HDMI ports, DisplayPort interfaces	Automotive TVS	AEC-Q101 qualified, high surge capability	ECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

Silicon epitaxial layer for precise voltage control
Passivation layer (SiO2/Nitride) to reduce leakage current
Backside metallization for low-inductance packaging
DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

Parameter	Description	Importance
Breakdown Voltage (Vbr)	Minimum voltage where TVS activates	Determines protection threshold
Clamping Voltage (Vc)	Max voltage during transient event	Must be below protected IC's max rating
Peak Pulse Current (Ipp)	Maximum surge current handling	Defines robustness against large transients
Response Time (tresp)	Time to switch from off to on state	Crucial for ESD protection (typically <1ps)
Leakage Current (Ir)	Off-state current at working voltage	Impacts power efficiency

5. Application Areas

Major industries and typical equipment:

Telecommunications: 5G base stations, optical transceivers
Automotive: CAN/LIN bus protection, ADAS sensors
Industrial: PLCs, motor drives
Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

Manufacturer	Product Series	Key Features
Littelfuse	SP301x Series	USB 3.1 Gen2 protection, 0.35pF capacitance
ON Semiconductor	NUP41060	6-channel ESD protection, 30kV HBM
STMicroelectronics	ESDA8401	Automotive-grade, 150A surge rating
Infineon	ESD320	Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

Operating voltage must be below Vbr (typically 1.1 Voper)
Clamping voltage should stay under protected IC's maximum ratings
Packaging selection based on board space and thermal requirements
Environmental factors: temperature range, humidity resistance
Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
Integration: Combo devices with filters and shielding
Higher robustness: 40kV+ ESD protection for industrial IoT
Advanced materials: Silicon carbide (SiC) for high-temperature applications
AI-driven selection tools for optimized component matching