TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
SMB8J13CA-E3/52

SMB8J13CA-E3/52

Vishay General Semiconductor – Diodes Division

TVS DIODE 13V 21.5V DO214AA

0

TV06B150J-HF

TV06B150J-HF

Comchip Technology

TVS DIODE 15V 24.4V SMB

0

MPLAD30KP200A

MPLAD30KP200A

Roving Networks / Microchip Technology

TVS DIODE 200V 322V PLAD

0

SA28CA-E3/73

SA28CA-E3/73

Vishay General Semiconductor – Diodes Division

TVS DIODE 28V 45.4V DO204AC

0

15KPA64A-B

15KPA64A-B

Wickmann / Littelfuse

TVS DIODE 64V 104.2V P600

0

SMDA24C-4E3/TR7

SMDA24C-4E3/TR7

Roving Networks / Microchip Technology

TVS DIODE 24V 55V 8SO

0

1.5SMC180CA

1.5SMC180CA

J.W. Miller / Bourns

TVS DIODE 154V 246V DO214AB

18308

MASMCJ5.0CA

MASMCJ5.0CA

Roving Networks / Microchip Technology

TVS DIODE 5V 9.2V DO214AB

0

1.5SMC75CA TR13 PBFREE

1.5SMC75CA TR13 PBFREE

Central Semiconductor

TVS DIODE 64.1V 103V SMC

198018000

SMBJ33AHR5G

SMBJ33AHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 33V 53.3V DO214AA

0

P4KE51CA

P4KE51CA

Wickmann / Littelfuse

TVS DIODE 43.6V 70.1V DO204AL

0

SM6T24AY

SM6T24AY

STMicroelectronics

TVS DIODE 20.5V 42.8V SMB

2

P4KE16A-E3/54

P4KE16A-E3/54

Vishay General Semiconductor – Diodes Division

TVS DIODE 13.6V 22.5V DO204AL

0

20KPA44C-B

20KPA44C-B

Wickmann / Littelfuse

TVS DIODE 44V 76.34V P600

0

P6SMB180CAHE3_A/H

P6SMB180CAHE3_A/H

Vishay General Semiconductor – Diodes Division

TVS DIODE DO214AA

0

SMBG45CA-E3/52

SMBG45CA-E3/52

Vishay General Semiconductor – Diodes Division

TVS DIODE 45V 72.7V DO215AA

0

MAP4KE68CA

MAP4KE68CA

Roving Networks / Microchip Technology

TVS DIODE 58.1V 92V DO204AL

0

3.0SMCJ8.0CA

3.0SMCJ8.0CA

Diotec Semiconductor

TVS SMC 8V 3000W BI

0

SMCJ28AHM6G

SMCJ28AHM6G

TSC (Taiwan Semiconductor)

TVS DIODE 28V 45.4V DO214AB

0

P6KE16A

P6KE16A

Wickmann / Littelfuse

TVS DIODE 13.6V 22.5V DO204AC

697

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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