TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
P6KE22CARL

P6KE22CARL

TVS DIODE

8000

SMAJ17AHE3_A/H

SMAJ17AHE3_A/H

Vishay General Semiconductor – Diodes Division

TVS DIODE DO214AC

0

ESD5481MUT5G

ESD5481MUT5G

Sanyo Semiconductor/ON Semiconductor

TVS DIODE 5V 12.4V 2X3DFN

950

SMBJP6KE150A-TP

SMBJP6KE150A-TP

Micro Commercial Components (MCC)

TVS DIODE 128V 207V DO214AA

1

SMBJ160ATR

SMBJ160ATR

SMC Diode Solutions

TVS DIODE 160V 259V SMB

0

1.5SMC12CA M6G

1.5SMC12CA M6G

TSC (Taiwan Semiconductor)

TVS DIODE 10.2V 16.7V DO214AB

0

SMLJ5.0E3/TR13

SMLJ5.0E3/TR13

Roving Networks / Microchip Technology

TVS DIODE 5V 9.6V DO214AB

0

SMBJ54A-HR

SMBJ54A-HR

Wickmann / Littelfuse

TVS DIODE 54V 87.1V DO214AA

0

SMA5J18A-M3/61

SMA5J18A-M3/61

Vishay General Semiconductor – Diodes Division

TVS DIODE 18V 29.2V DO214AC

0

SMAJ48CE3/TR13

SMAJ48CE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 48V 85.5V DO214AC

0

SMS05.TCT

SMS05.TCT

Semtech

TVS DIODE 5V 14.5V SOT23-6

4273

15KPA54CA

15KPA54CA

Wickmann / Littelfuse

TVS DIODE 54V 87.7V P600

619

1V5KE400A

1V5KE400A

TSC (Taiwan Semiconductor)

TVS DIODE 342V 548V DO201AE

0

SMAJ48CATR

SMAJ48CATR

SMC Diode Solutions

TVS DIODE 48V 77.4V SMA

0

P6SMBJ58C

P6SMBJ58C

Diotec Semiconductor

TVS SMB 58V 600W BI

0

DFLT33A-7

DFLT33A-7

Zetex Semiconductors (Diodes Inc.)

TVS DIODE 33V 53.3V POWERDI 123

0

XGD10402KR

XGD10402KR

Wickmann / Littelfuse

TVS DIODE 24V 40V 0402

42965

P6SMB91CA-E3/5B

P6SMB91CA-E3/5B

Vishay General Semiconductor – Diodes Division

TVS DIODE 77.8V 125V DO214AA

0

MXL5KP33CA

MXL5KP33CA

Roving Networks / Microchip Technology

TVS DIODE 33V 53.3V CASE 5A

0

P6KE200BRLG

P6KE200BRLG

TVS DIODE 171V 274V AXIAL

10000

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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