TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
SMDJ20AHR7G

SMDJ20AHR7G

TSC (Taiwan Semiconductor)

TVS DIODE 20V 32.4V DO214AB

0

SM15T24A-E3/57T

SM15T24A-E3/57T

Vishay General Semiconductor – Diodes Division

TVS DIODE 20.5V 33.2V DO214AB

198

10BJ110A

10BJ110A

PowerStor (Eaton)

TVS DIODE 110V 177VC 1KW DO214AA

0

MASMLJ70AE3

MASMLJ70AE3

Roving Networks / Microchip Technology

TVS DIODE 70V 113V DO214AB

0

1.5SMCJ13CA

1.5SMCJ13CA

Diotec Semiconductor

TVS SMC 13V 1500W BI

0

P6SMBJ51CA-AQ

P6SMBJ51CA-AQ

Diotec Semiconductor

TVS SMB 51V 600W BI

0

SMAJ58A-E3/61

SMAJ58A-E3/61

Vishay General Semiconductor – Diodes Division

TVS DIODE 58V 93.6V DO214AC

382

SA48A A0G

SA48A A0G

TSC (Taiwan Semiconductor)

TVS DIODE 48V 77.4V DO204AC

0

ESDA6V1LY

ESDA6V1LY

STMicroelectronics

TVS DIODE 5.2V 16V SOT23-3

0

P6KE33A A0G

P6KE33A A0G

TSC (Taiwan Semiconductor)

TVS DIODE 28.2V 45.7V DO204AC

0

824520151

824520151

Würth Elektronik Midcom

WE-TVSP POWER TVS DIODE SIZE DO-

0

5KP90AHE3/54

5KP90AHE3/54

Vishay General Semiconductor – Diodes Division

TVS DIODE 90V 146V P600

0

MXL15KP33AE3

MXL15KP33AE3

Roving Networks / Microchip Technology

TVS DIODE 33V 54.8V CASE 5A

0

P4SMA30A M2G

P4SMA30A M2G

TSC (Taiwan Semiconductor)

TVS DIODE 25.6V 41.4V DO214AC

0

1.5KE51AHE3_A/D

1.5KE51AHE3_A/D

Vishay General Semiconductor – Diodes Division

TVS DIODE 43.6V 70.1V 1.5KE

0

P4SMAJ8.5C

P4SMAJ8.5C

Diotec Semiconductor

TVS SMA 8.5V 400W BI

0

SA33CA-E3/54

SA33CA-E3/54

Vishay General Semiconductor – Diodes Division

TVS DIODE 33V 53.3V DO204AC

19

SMAJ51CA-Q

SMAJ51CA-Q

J.W. Miller / Bourns

TVS DIODE 51V 82.4V SMA

3742

CPDER5V0

CPDER5V0

Comchip Technology

TVS DIODE 5V 15V 0503/SOD723F

4000

MX15KP100AE3

MX15KP100AE3

Roving Networks / Microchip Technology

TVS DIODE 100V 162V CASE 5A

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
RFQ BOM Call Skype Email
Top