VS-GB100TP120N

Manufacturer Part VS-GB100TP120N
Manufacturer Vishay General Semiconductor – Diodes Division
Description IGBT MOD 1200V 200A INT-A-PAK
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet VS-GB100TP120N PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 08 - Dec 12 2025
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
IGBT Type:-
Configuration:Half Bridge
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):200 A
Power - Max:650 W
Vce(on) (Max) @ Vge, Ic:2.2V @ 15V, 100A
Current - Collector Cutoff (Max):5 mA
Input Capacitance (Cies) @ Vce:7.43 nF @ 25 V
Input:Standard
NTC Thermistor:No
Operating Temperature:150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:INT-A-Pak
Supplier Device Package:INT-A-PAK
More Information
VS-GB100TP120N
VS-GB100TP120N
Vishay General Semiconductor – Diodes Division VS-GB100TP120N is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
VS-GB100TP120N PDF
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