3N257-5410E4/51

Manufacturer Part 3N257-5410E4/51
Manufacturer Vishay General Semiconductor – Diodes Division
Description BRIDGE RECT 1PHASE 600V 2A KBPM
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet 3N257-5410E4/51 PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 08 - Dec 12 2025
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:-
Package:Tray
Part Status:Obsolete
Diode Type:Single Phase
Technology:Standard
Voltage - Peak Reverse (Max):600 V
Current - Average Rectified (Io):2 A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Operating Temperature:-55°C ~ 165°C (TJ)
Mounting Type:Through Hole
Package / Case:4-SIP, KBPM
Supplier Device Package:KBPM
More Information
3N257-5410E4/51
3N257-5410E4/51
Vishay General Semiconductor – Diodes Division 3N257-5410E4/51 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
3N257-5410E4/51 PDF
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