PDTB113ES,126

Manufacturer Part PDTB113ES,126
Manufacturer NXP Semiconductors
Description TRANS PREBIAS PNP 500MW TO92-3
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet PDTB113ES,126 PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 08 - Dec 12 2025
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:-
Package:Tape & Box (TB)
Part Status:Obsolete
Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):1 kOhms
Resistor - Emitter Base (R2):1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:33 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:-
Power - Max:500 mW
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:TO-92-3
More Information
PDTB113ES,126
PDTB113ES,126
NXP Semiconductors PDTB113ES,126 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
PDTB113ES,126 PDF
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