GT8G133(TE12L,Q)

Manufacturer Part GT8G133(TE12L,Q)
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description IGBT 400V 600MW 8TSSOP
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet GT8G133(TE12L,Q) PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 08 - Dec 12 2025
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Product Attributes
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Obsolete
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):400 V
Current - Collector (Ic) (Max):-
Current - Collector Pulsed (Icm):150 A
Vce(on) (Max) @ Vge, Ic:2.9V @ 4V, 150A
Power - Max:600 mW
Switching Energy:-
Input Type:Standard
Gate Charge:-
Td (on/off) @ 25°C:1.7µs/2µs
Test Condition:-
Reverse Recovery Time (trr):-
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package:8-TSSOP
More Information
GT8G133(TE12L,Q)
GT8G133(TE12L,Q)
Toshiba Electronic Devices and Storage Corporation GT8G133(TE12L,Q) is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
GT8G133(TE12L,Q) PDF
Same Series
GT8G133(TE12L,Q)
GT8G133(TE12L,Q)
IGBT 400V 600MW 8TSSOP
Toshiba Electronic Devices and Storage Corporation
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