GT10G131(TE12L,Q)

Manufacturer Part GT10G131(TE12L,Q)
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description IGBT 400V 1W 8-SOIC
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet GT10G131(TE12L,Q) PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 09 - Dec 13 2025
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Obsolete
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):400 V
Current - Collector (Ic) (Max):-
Current - Collector Pulsed (Icm):200 A
Vce(on) (Max) @ Vge, Ic:2.3V @ 4V, 200A
Power - Max:1 W
Switching Energy:-
Input Type:Standard
Gate Charge:-
Td (on/off) @ 25°C:3.1µs/2µs
Test Condition:-
Reverse Recovery Time (trr):-
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.173", 4.40mm Width)
Supplier Device Package:8-SOP (5.5x6.0)
More Information
GT10G131(TE12L,Q)
GT10G131(TE12L,Q)
Toshiba Electronic Devices and Storage Corporation GT10G131(TE12L,Q) is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
GT10G131(TE12L,Q) PDF
Same Series
GT10J312(Q)
GT10J312(Q)
IGBT 600V 10A 60W TO220SM
Toshiba Electronic Devices and Storage Corporation
GT10G131(TE12L,Q)
GT10G131(TE12L,Q)
IGBT 400V 1W 8-SOIC
Toshiba Electronic Devices and Storage Corporation
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