TK55D10J1(Q) Toshiba Electronic Devices and Storage Corporation TK55D10J1(Q) inventory, pricing, datasheet

Manufacturer Part	TK55D10J1(Q)
Manufacturer	Toshiba Electronic Devices and Storage Corporation
Description	MOSFET N-CH 100V 55A TO220
Category	Discrete Semiconductor \| Diodes, Transistor, electronic component–Ample Chip
RoHS	Lead free / RoHS Compliant
Warranty	365 days
Datasheet	TK55D10J1(Q) PDF
Availability	0 pieces
Shipped from	HK warehouse
Expected Shipping	Dec 09 - Dec 13 2025

Product Attributes

Type	Description
Series:	-
Package:	Tube
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	55A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	10.5mOhm @ 27A, 10V
Vgs(th) (Max) @ Id:	2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	110 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	5700 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	140W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220(W)
Package / Case:	TO-220-3

More Information

TK55D10J1(Q)

Toshiba Electronic Devices and Storage Corporation TK55D10J1(Q) is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.