RN1317(TE85L,F) Toshiba Electronic Devices and Storage Corporation RN1317(TE85L,F) inventory, pricing, datasheet

Manufacturer Part	RN1317(TE85L,F)
Manufacturer	Toshiba Electronic Devices and Storage Corporation
Description	TRANS PREBIAS NPN 50V 0.1A USM
Category	Discrete Semiconductor \| Diodes, Transistor, electronic component–Ample Chip
RoHS	Lead free / RoHS Compliant
Warranty	365 days
Datasheet	RN1317(TE85L,F) PDF
Availability	0 pieces
Shipped from	HK warehouse
Expected Shipping	Dec 09 - Dec 13 2025

Product Attributes

Type	Description
Series:	-
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	100 mA
Voltage - Collector Emitter Breakdown (Max):	50 V
Resistor - Base (R1):	10 kOhms
Resistor - Emitter Base (R2):	4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	250 MHz
Power - Max:	100 mW
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	USM

More Information

RN1317(TE85L,F)

Toshiba Electronic Devices and Storage Corporation RN1317(TE85L,F) is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.