1N5406G

Manufacturer Part 1N5406G
Manufacturer Sanyo Semiconductor/ON Semiconductor
Description DIODE GEN PURP 600V 3A DO201AD
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet 1N5406G PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 08 - Dec 12 2025
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Product Attributes
Type Description
Series:-
Package:Bulk
Part Status:Active
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:1 V @ 3 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):-
Current - Reverse Leakage @ Vr:10 µA @ 600 V
Capacitance @ Vr, F:-
Mounting Type:Through Hole
Package / Case:DO-201AA, DO-27, Axial
Supplier Device Package:DO-201AD
Operating Temperature - Junction:-65°C ~ 150°C
More Information
1N5406G
1N5406G
Sanyo Semiconductor/ON Semiconductor 1N5406G is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
1N5406G PDF
Same Series
1N5404G A0G
1N5404G A0G
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