BYG10J-E3/TR

Manufacturer Part BYG10J-E3/TR
Manufacturer Vishay General Semiconductor – Diodes Division
Description DIODE AVALANCHE 600V 1.5A
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet BYG10J-E3/TR PDF
Availability 1166 pieces
Shipped from HK warehouse
Expected Shipping Dec 08 - Dec 12 2025
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Diode Type:Avalanche
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1.5A
Voltage - Forward (Vf) (Max) @ If:1.15 V @ 1.5 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):4 µs
Current - Reverse Leakage @ Vr:1 µA @ 600 V
Capacitance @ Vr, F:-
Mounting Type:Surface Mount
Package / Case:DO-214AC, SMA
Supplier Device Package:DO-214AC (SMA)
Operating Temperature - Junction:-55°C ~ 150°C
More Information
BYG10J-E3/TR
BYG10J-E3/TR
Vishay General Semiconductor – Diodes Division BYG10J-E3/TR is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
BYG10J-E3/TR PDF
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BYG10J-E3/TR
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