IGP01N120H2XKSA1

Manufacturer Part IGP01N120H2XKSA1
Manufacturer IR (Infineon Technologies)
Description POWER BIPOLAR TRANSISTOR, NPN
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet IGP01N120H2XKSA1 PDF
Availability 26012 pieces
Shipped from HK warehouse
Expected Shipping Dec 10 - Dec 14 2025
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:-
Package:Tube
Part Status:Obsolete
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):1.2 V
Current - Collector (Ic) (Max):3.2 A
Current - Collector Pulsed (Icm):3.5 A
Vce(on) (Max) @ Vge, Ic:2.8V @ 15V, 1A
Power - Max:28 W
Switching Energy:140µJ
Input Type:Standard
Gate Charge:8.6 nC
Td (on/off) @ 25°C:13ns/370ns
Test Condition:800V, 1A, 241Ohm, 15V
Reverse Recovery Time (trr):-
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:PG-TO220-3
More Information
IGP01N120H2XKSA1
IGP01N120H2XKSA1
IR (Infineon Technologies) IGP01N120H2XKSA1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
IGP01N120H2XKSA1 PDF
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Payment
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Credit Card 4% fee
Western Union Free of charge
Money Gram Free of charge
Shipping
Shipping Type Lead Time
DHL 2-5 days
Fedex 2-5 days
UPS 2-5 days
TNT 2-6 days
EMS 3-7 days
Registered Air Mail 20-35 days
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