IRG8P25N120KD-EPBF

Manufacturer Part IRG8P25N120KD-EPBF
Manufacturer IR (Infineon Technologies)
Description IRG8P25N120 - DISCRETE IGBT WITH
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet IRG8P25N120KD-EPBF PDF
Availability 9825 pieces
Shipped from HK warehouse
Expected Shipping Dec 09 - Dec 13 2025
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):1.2 V
Current - Collector (Ic) (Max):40 A
Current - Collector Pulsed (Icm):45 A
Vce(on) (Max) @ Vge, Ic:2V @ 15V, 15A
Power - Max:180 W
Switching Energy:800µJ (on), 900µJ (off)
Input Type:Standard
Gate Charge:135 nC
Td (on/off) @ 25°C:20ns/170ns
Test Condition:600V, 15A, 10Ohm, 15V
Reverse Recovery Time (trr):70 ns
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247AD
More Information
IRG8P25N120KD-EPBF
IRG8P25N120KD-EPBF
IR (Infineon Technologies) IRG8P25N120KD-EPBF is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
IRG8P25N120KD-EPBF PDF
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