| Manufacturer Part | SIS776DN-T1-GE3 |
|---|---|
| Manufacturer | Vishay / Siliconix |
| Description | MOSFET N-CH 30V 35A PPAK1212-8 |
| Category | Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip |
| RoHS | Lead free / RoHS Compliant |
| Warranty | 365 days |
| Datasheet | SIS776DN-T1-GE3 PDF |
| Availability | 0 pieces |
| Shipped from | HK warehouse |
| Expected Shipping | Dec 09 - Dec 13 2025 |
In Stock Min.: 1 Mult.: 1
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| Type | Description |
|---|---|
| Series: | SkyFET®, TrenchFET® |
| Package: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30 V |
| Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 6.2mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 36 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1360 pF @ 15 V |
| FET Feature: | Schottky Diode (Body) |
| Power Dissipation (Max): | 3.8W (Ta), 52W (Tc) |
| Operating Temperature: | -50°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PowerPAK® 1212-8 |
| Package / Case: | PowerPAK® 1212-8 |
| Payment method | Hand Fee |
| Telegraphic Transfer | Request service |
| Paypal | 4% fee |
| Credit Card | 4% fee |
| Western Union | Free of charge |
| Money Gram | Free of charge |
| Shipping Type | Lead Time |
| DHL | 2-5 days |
| Fedex | 2-5 days |
| UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
| Registered Air Mail | 20-35 days |
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