IGT60R070D1ATMA1

Manufacturer Part IGT60R070D1ATMA1
Manufacturer IR (Infineon Technologies)
Description GANFET N-CH 600V 31A 8HSOF
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Availability 3726 pieces
Shipped from HK warehouse
Expected Shipping Dec 08 - Dec 12 2025
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Product Attributes
Type Description
Series:CoolGaN™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:31A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:1.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-10V
Input Capacitance (Ciss) (Max) @ Vds:380 pF @ 400 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-HSOF-8-3
Package / Case:8-PowerSFN
More Information
IGT60R070D1ATMA1
IGT60R070D1ATMA1
IR (Infineon Technologies) IGT60R070D1ATMA1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Same Series
IGT60R190D1SATMA1
IGT60R190D1SATMA1
GANFET N-CH 600V 12.5A 8HSOF
IR (Infineon Technologies)
IGT60R070D1ATMA1
IGT60R070D1ATMA1
GANFET N-CH 600V 31A 8HSOF
IR (Infineon Technologies)
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