PHK12NQ03LT,518

Manufacturer Part PHK12NQ03LT,518
Manufacturer NXP Semiconductors
Description POWER FIELD-EFFECT TRANSISTOR, 1
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet PHK12NQ03LT,518 PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 08 - Dec 12 2025
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:TrenchMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:11.8A (Tj)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:10.5mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17.6 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.335 pF @ 16 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
More Information
PHK12NQ03LT,518
PHK12NQ03LT,518
NXP Semiconductors PHK12NQ03LT,518 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
PHK12NQ03LT,518 PDF
Same Series
PHK13N03LT,518
PHK13N03LT,518
MOSFET N-CH 30V 13.8A 8SO
Nexperia
PHK12NQ03LT,518-NEX
PHK12NQ03LT,518-NEX
POWER FIELD-EFFECT TRANSISTOR, 1
Nexperia
PHK12NQ03LT,518
PHK12NQ03LT,518
POWER FIELD-EFFECT TRANSISTOR, 1
NXP Semiconductors
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