TK90S06N1L,LQ

Manufacturer Part TK90S06N1L,LQ
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description MOSFET N-CH 60V 90A TO252-3
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet TK90S06N1L,LQ PDF
Availability 1 pieces
Shipped from HK warehouse
Expected Shipping Dec 08 - Dec 12 2025
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:U-MOSVIII-H
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:90A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.3mOhm @ 45A, 10V
Vgs(th) (Max) @ Id:2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:81 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5400 pF @ 10 V
FET Feature:-
Power Dissipation (Max):157W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
More Information
TK90S06N1L,LQ
TK90S06N1L,LQ
Toshiba Electronic Devices and Storage Corporation TK90S06N1L,LQ is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
TK90S06N1L,LQ PDF
Same Series
TK90S06N1L,LXHQ
TK90S06N1L,LXHQ
MOSFET N-CH 60V 90A DPAK
Toshiba Electronic Devices and Storage Corporation
TK90S06N1L,LQ
TK90S06N1L,LQ
MOSFET N-CH 60V 90A TO252-3
Toshiba Electronic Devices and Storage Corporation
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