SIR510DP-T1-RE3

Manufacturer Part SIR510DP-T1-RE3
Manufacturer Vishay / Siliconix
Description N-CHANNEL 100 V (D-S) MOSFET POW
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 08 - Dec 12 2025
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Product Attributes
Type Description
Series:TrenchFET® Gen V
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:31A (Ta), 126A (Tc)
Drive Voltage (Max Rds On, Min Rds On):7.5V, 10V
Rds On (Max) @ Id, Vgs:3.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:81 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4980 pF @ 50 V
FET Feature:-
Power Dissipation (Max):6.25W (Ta), 104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:PowerPAK® SO-8
More Information
SIR510DP-T1-RE3
SIR510DP-T1-RE3
Vishay / Siliconix SIR510DP-T1-RE3 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Same Series
SIR510DP-T1-RE3
SIR510DP-T1-RE3
N-CHANNEL 100 V (D-S) MOSFET POW
Vishay / Siliconix
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