IPI020N06NAKSA1

Manufacturer Part IPI020N06NAKSA1
Manufacturer IR (Infineon Technologies)
Description OPTLMOS N-CHANNEL POWER MOSFET
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet IPI020N06NAKSA1 PDF
Availability 20420 pieces
Shipped from HK warehouse
Expected Shipping Dec 08 - Dec 12 2025
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Product Attributes
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:29A (Ta), 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:2.8V @ 143µA
Gate Charge (Qg) (Max) @ Vgs:106 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7.8 pF @ 30 V
FET Feature:-
Power Dissipation (Max):3W (Ta), 214W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3-1
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
More Information
IPI020N06NAKSA1
IPI020N06NAKSA1
IR (Infineon Technologies) IPI020N06NAKSA1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
IPI020N06NAKSA1 PDF
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